ADDISON, TX--(Marketwired - March 29, 2017) - D3 Semiconductor, a company bringing together affiliated semiconductor companies and top-talent experts, announces its inaugural entry into the power ...

eGaN FETs have universally lower figures of merit and superior electrical and thermal packaging. When operated in equivalent test comparison, they demonstrate significant electrical and thermal ...

Significant efforts have been made to show the performance improvements achievable with eGaN® FETs over silicon MOSFETs in both hard and soft switching applications. This volume of the eGaN ...

D3 Semiconductor introduced the +FET line of 650-V-rated superjunction MOSFETs. +FET MOSFETs enable high-efficiency solutions for a range of hard-switched applications, including PFC boost and ...

Given the maturity of MOSFETs, selecting one for your next design may seem deceptively simple. Engineers are familiar with the figures of merit on a MOSFET data sheet. Selecting a MOSFET requires the ...

Infineon announced source-down packaged power mosfets earlier today in which it flipped the die to improve transistor performance. Alongside the part announcement it released a diagram and its reasons ...

These new generation 100 V eGaN FETs are ideal for 48-V OUT synchronous rectification, class-D audio, infotainment, and lidar. EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC, the world’s leader in ...

Magnachip Semiconductor Corporation (NYSE: MX, "Magnachip") today announced the launch of two new 8th-generation Ultra Low-Ron 12V low-voltage (LV) MOSFETs designed for high-performance smartphone ...

The T-type circuit structure consists of three MOS FET relays that help reduce the leakage current to a minimal level without affecting the test equipment's inspection accuracy, allowing ...