Samsung is continuing its aggressive push toward next-generation NAND Flash scaling with the development of a new 900-layer V-NAND design built using advanced wafer bonding technology.

Two 450-layer memory chips bonded together.

Samsung Electronics, a global leader in memory technology, has once again pushed the boundaries of innovation with the introduction of its 9th-generation vertical NAND (V-NAND) technology. This ...

Samsung 900-layer NAND prototype — the world’s first — uses Cell Multi-Bonding to fuse two 450-layer wafers into one chip, ...

Samsung is reportedly on the verge of announcing its next-generation V-NAND technology for SSDs, which will feature 290 layers for the first time. The company currently offers 236-layer V-NAND, so ...

According to an official press release, Samsung Electronics has commenced mass production of its 1TB QLC 9th-generation V-NAND technology. This follows the successful production of the industry's ...

RIDGEFIELD PARK, N.J.--(BUSINESS WIRE)--Samsung Electronics America, Inc. today introduced the 860 PRO and 860 EVO solid state drives (SSDs), the most up-to-date additions to the company’s SATA ...

Why it matters: Samsung's V-NAND technology has advanced significantly, growing from 24 layers to nearly 300 layers in just over a decade. Although the company has faced significant challenges in ...

The race to dominate next-generation NAND flash memory has long been measured in layers — and Samsung Electronics appears to ...

TL;DR: Samsung plans to launch its 10th Gen V-NAND in 2026, featuring a 400-layer configuration using Bonding Vertical (BV) NAND technology for higher data storage, performance, and reliability. This ...

SEOUL, South Korea--(BUSINESS WIRE)--Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced it has begun mass production of its one-terabit (Tb) quad-level cell ...